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GenX3TM 300V IGBT IXGA42N30C3
High Speed PT IGBTs for 50-150kHz switching
IXGH42N30C3 IXGP42N30C3
VCES IC110 VCE(sat) tfi typ
= = =
300V 42A 1.85V 65ns
TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Mounting torque (TO-247)(TO-220) TO-263 TO-247 TO-220 Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 110C (chip capability) TC = 25C, 1ms TC = 25C TC = 25C VGE = 15V, TVJ = 125C, RG = 10 Clamped inductive load @ 300V TC = 25C Maximum Ratings 300 300 20 30 42 250 42 250 ICM = 84 223 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 6.0 3.0 V V V V A A A mJ A W C C C C C Nm/lb.in. g g g
G C C (TAB) E C = Collector TAB = Collector G C E C (TAB) G E C (TAB)
TO-247 (IXGH)
TO-220 (IXGP)
G = Gate E = Emitter
Features Optimized for low switching losses Square RBSOA High current handling capability International standard packages Advantages
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0V = 250A, VCE = VGE TJ = 125C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 25 500 100 1.54 1.54 1.85 TJ = 125C V V A A nA V V
High power density Low gate drive requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
DS99885B(07/08)
VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 42A, VGE = 15V, Note1
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA42N30C3 IXGH42N30C3 IXGP42N30C3
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 TO-247 0.50 0.25 Inductive Load, TJ = 125C IC = 0.5 * IC110, VGE = 15V VCE = 200V, RG = 10 Inductive Load, TJ = 25C IC = 0.5 * IC110, VGE = 15V VCE = 200V, RG = 10 IC = IC110, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 0.5 * IC110, VCE = 10V, Note 1 Min. 20 Characteristic Values Typ. Max. 33 2140 218 60 76 15 26 21 23 0.12 113 65 0.15 21 22 0.21 127 102 0.20 170 120 0.28 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.56 C/W C/W C/W TO-220 (IXGP) Outline
e P
TO-247 AD Outline
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Note1. Pulse test, t 300s; duty cycle, d 2%.
TO-263 (IXGA) Outline
Pins: 1 - Gate 2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA42N30C3 IXGH42N30C3 IXGP42N30C3
Fig. 1. Output Characteristics @ 25C
90 80 70 VGE = 15V 13V 11V 9V 325 300 275 250 225 VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
60 50 40 30 20 10
200 175 150 125 100 75 50
9V
7V
7V
5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
25 0 0 2 4
5V 6 8 10 12 14 16
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
90 80 70 VGE = 15V 13V 11V 1.4
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V 1.3 I
C
= 84A
VCE(sat) - Normalized
9V
1.2 1.1 I 1.0 0.9 I 0.8
C C
IC - Amperes
60 50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 5V 7V
= 42A
= 21A
0.7 -50 -25 0 25 50 75 100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
3.4 3.2 3.0 2.8 I
C
Fig. 6. Input Admittance
120 110 100
TJ = 25C = 84A 42A 21A
90
VCE - Volts
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 6 7 8
IC - Amperes
80 70 60 50 40 30 20 10 0 TJ = 125C 25C - 40C
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA42N30C3 IXGH42N30C3 IXGP42N30C3
Fig. 7. Transconductance
60 55 50 45 25C 125C 12 TJ = - 40C 14 16 VCE = 150V I C = 42A I G = 10 mA
Fig. 8. Gate Charge
g f s - Siemens
40 35 30 25 20 15 10 2 5 0 0 20 40 60 80 100 120 140 0 0 10 20 30 40 50 60 70 80 4
VGE - Volts
10 8 6
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 f = 1 MHz Cies 80 70 1,000 60 90
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
IC - Amperes
50 40 30 20 TJ = 125C RG = 10 dV / dt < 10V / ns
Coes
100
Cres 10 0 5 10 15 20 25 30 35 40
10 0 50
100
150
200
250
300
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA42N30C3 IXGH42N30C3 IXGP42N30C3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
3.4 3.0 2.6 Eoff VCE = 200V I 2.2 1.8 1.4 1.0 0.6 0.2 10 15 20 25 30 35 40 45 50 55 60 65 70 75 I C = 42A
C
Fig. 13. Inductive Swiching Energy Loss vs. Collector Current
3.2 2.0 1.8 1.6 2.4 Eoff VCE = 200V Eon 2.0
Eon -
---
2.8
----
1.8 1.6 1.4
TJ = 125C , VGE = 15V
RG = 10 , VGE = 15V
Eoff - MilliJoules
Eoff - MilliJoules
= 84A 2.0 1.6 1.2 0.8
1.4 1.2 1.0 0.8 0.6 0.4 TJ = 25C TJ = 125C
E
E - MilliJoules
on
on
1.2 1.0 0.8 0.6 0.4 0.2 0.0
- MilliJoules
0.4 0.0
0.2 0.0 20 25 30 35 40 45 50 55 60 65 70 75 80 85
RG - Ohms
IC - Amperes
Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature
2.2 2.0 1.8 1.6 I C = 84A 1.3 1.2 1.1 1.0 Eoff VCE = 200V Eon 200 190 180
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
600
tf VCE = 200V
td(off) - - - -
550 500
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
Eoff - MilliJoules
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 35 45 55 65 75 I C = 42A
----
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 125
t f - Nanoseconds
170 160 150 140 130 120 110 100 10 15 20 25 30 35 40 45 50 55 60 65 70 75 I
C
450 400 I
C
E
on
RG = 10 , VGE = 15V
- MilliJoules
= 42A
350 300 = 84A 250 200 150 100
85
95
105
115
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
170 160 150 140 140 170 160 135 150
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
135
tf
VCE = 200V
td(off) - - - -
tf
VCE = 200V
td(off) - - - 130
RG = 10 , VGE = 15V TJ = 125C
RG = 10 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
130 120 110 100 90 80 70 60 50 20 30 40 50 60 TJ = 25C
130
t f - Nanoseconds
140 130 120 110 100 90
125 I C = 84A 120
125
120
115
115 I
C
= 42A
80 110 70 80 70 25 35 45 55 65 75 85 95 105 115 110 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA42N30C3 IXGH42N30C3 IXGP42N30C3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
200 180 160 100 140 120
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
32
tr
VCE = 200V I
C
td(on) - - - -
90 80
tr
td(on) - - - -
30
TJ = 125C, VGE = 15V
RG = 10 , VGE = 15V
t d(on) - Nanoseconds
t r - Nanoseconds
140 = 84A 120 100 80 60 40 20 10 15 20 25 30 35 40 45 50 55 60 65 70 75 I = 42A
70 60 50 40 30 20 10
t r - Nanoseconds
100 80 60 40 20 0 20
25C < TJ < 125C VCE = 200V
t d(on) - Nanoseconds
28 26 24 22 20 18
C
25
30
35
40
45
50
55
60
65
70
75
80
85
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
100 90 80 I C = 84A 32 30
t d(on) - Nanoseconds
t r - Nanoseconds
28
tr
70 60 50 40 30 25 35 45 55 65 75 85 VCE = 200V
td(on) - - - 26 24 22 20 18 125
RG = 10 , VGE = 15V
I
C
= 42A
95
105
115
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_42N30C3(55)8-05-08-A

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